Abstract/Details

Numerical modeling of polycrystalline copper indium selenium(2) based hetrostructure solar cells


1995 1995

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Abstract (summary)

CuInSe$\sb2$ is a good candidate for thin-film solar cells because of its low cost, manufacturability and good absorption of light. However, its material properties and physics are not well understood. In this thesis, the numerical modeling of thin-film poly-crystalline CIS based solar cells is presented. The computer simulations of the solar cells are carried out by simultaneously solving the three fundamental equations describing the behavior of semiconductor devices, the Poisson and current continuity equations.

Numerical modeling helps explain why most CuInSe$\sb2$ based solar cells exhibit either high short-circuit current/low open-circuit voltage or low short-circuit current/high open-circuit voltage. If there is a slightly less doped region near the junction, compared to the doping level of bulk CIS, the width of depletion region is effectively the same as the less doped layer. When the depletion region width is wide, there is more space charge recombination, thus low open-circuit voltage, and the collection field extends further resulting in high short-circuit current.

It has been experimentally observed that there are two distinctively different types of illuminated I-V curves: one that develops a kink near the open-circuit voltage and then resumes its exponential increase, and another in which the current increase slows down with increasing applied voltage near the open-circuit voltage and never resumes its exponential increase. The numerical simulation results show that these non-exponential illuminated I-V curves can be obtained when there is a secondary parasitic junction. When the second junction is at the heterojunction interface, either caused by a conduction band offset or by interface states, the current resumes its exponential increase after showing a kink in the I-V curve. However, the current never resumes its exponential increase when the second parasitic junction is due to a Schoktty diode at the back contact.

Indexing (details)


Subject
Electrical engineering;
Condensation
Classification
0544: Electrical engineering
0611: Condensation
Identifier / keyword
Applied sciences; Pure sciences; copper indium selenide; polycrystalline solar cells; thin films
Title
Numerical modeling of polycrystalline copper indium selenium(2) based hetrostructure solar cells
Author
Lee, Youn-Jung
Number of pages
100
Publication year
1995
Degree date
1995
School code
0183
Source
DAI-B 56/09, Dissertation Abstracts International
Place of publication
Ann Arbor
Country of publication
United States
Advisor
Gray, Jeffery L.
University/institution
Purdue University
University location
United States -- Indiana
Degree
Ph.D.
Source type
Dissertations & Theses
Language
English
Document type
Dissertation/Thesis
Dissertation/thesis number
9601529
ProQuest document ID
304211677
Copyright
Database copyright ProQuest LLC; ProQuest does not claim copyright in the individual underlying works.
Document URL
http://search.proquest.com/docview/304211677/abstract
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