Abstract/Details

Electron mobility calculations in silicon, germanium, and III -V substrates with high-κ gate dielectrics


2008 2008

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Abstract (summary)

With the continued scaling down of MOSFET dimensions has come the introduction of high-κ gate insulators, high mobility substrates, and new device geometries. The purpose of this work is to model the low-field electron mobility to evaluate the performance of the various options to continue Moore's Law. We model the electron mobility in Si, Ge, and III-V inversion layers and quantum wells, including scattering with surface optical phonons associated with high-kappa gate insulators, bulk phonons, and surface roughness scattering. We compare the low-field mobility results with Monte Carlo simulations to understand the role of mobility in predicting device performance in short-channel devices. For the first time, the theory describing surface optical phonon scattering is extended to the symmetric double-gate structure with a Si body - accounting for the coupling of the two interfaces and screening via the substrate plasmon.

Indexing (details)


Subject
Electrical engineering
Classification
0544: Electrical engineering
Identifier / keyword
Applied sciences; Electron mobility; Gate dielectrics; Germanium; III-V substrates; Silicon
Title
Electron mobility calculations in silicon, germanium, and III -V substrates with high-κ gate dielectrics
Author
O'Regan, Terrance P.
Number of pages
137
Publication year
2008
Degree date
2008
School code
0118
Source
DAI-B 69/09, Dissertation Abstracts International
Place of publication
Ann Arbor
Country of publication
United States
ISBN
9780549786368
Advisor
Fischetti, Massimo
Committee member
Anderson, Neal; Maroudas, Dimitrios; Polizzi, Eric
University/institution
University of Massachusetts Amherst
Department
Electrical & Computer Engineering
University location
United States -- Massachusetts
Degree
Ph.D.
Source type
Dissertations & Theses
Language
English
Document type
Dissertation/Thesis
Dissertation/thesis number
3325153
ProQuest document ID
304566329
Copyright
Database copyright ProQuest LLC; ProQuest does not claim copyright in the individual underlying works.
Document URL
http://search.proquest.com/docview/304566329
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