Normal-Superconductor-Superconductor (NSS) single-electron tunneling (SET) transistors were studied. A hysteresis in the current versus gate voltage curve was found in a SET transistor and SET trap hybrid system. This hybrid system can be used as a new type of memory cell in electronics. The inferred junction capacitance, as extracted from the nonlinear current-voltage characteristics, was measured as a function of magnetic field and temperature. Noise issue in SET transistor was studied as well.
Identifier / keyword
Pure sciences; Junction capacitance; Noise; Single-electron tunneling; Transistor
Characterization of single -electron tunneling transistor
DAI-B 61/07, Dissertation Abstracts International
Place of publication
Country of publication
Tuominen, Mark T.
University of Massachusetts Amherst
United States -- Massachusetts
Dissertations & Theses
ProQuest document ID
Database copyright ProQuest LLC; ProQuest does not claim copyright in the individual underlying works.