Abstract/Details

Characterization of single -electron tunneling transistor


2000 2000

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Abstract (summary)

Normal-Superconductor-Superconductor (NSS) single-electron tunneling (SET) transistors were studied. A hysteresis in the current versus gate voltage curve was found in a SET transistor and SET trap hybrid system. This hybrid system can be used as a new type of memory cell in electronics. The inferred junction capacitance, as extracted from the nonlinear current-voltage characteristics, was measured as a function of magnetic field and temperature. Noise issue in SET transistor was studied as well.

Indexing (details)


Subject
Condensation
Classification
0611: Condensation
Identifier / keyword
Pure sciences; Junction capacitance; Noise; Single-electron tunneling; Transistor
Title
Characterization of single -electron tunneling transistor
Author
Jiang, Chong
Number of pages
132
Publication year
2000
Degree date
2000
School code
0118
Source
DAI-B 61/07, Dissertation Abstracts International
Place of publication
Ann Arbor
Country of publication
United States
ISBN
9780599844599, 0599844590
Advisor
Tuominen, Mark T.
University/institution
University of Massachusetts Amherst
University location
United States -- Massachusetts
Degree
Ph.D.
Source type
Dissertations & Theses
Language
English
Document type
Dissertation/Thesis
Dissertation/thesis number
9978511
ProQuest document ID
304605294
Copyright
Database copyright ProQuest LLC; ProQuest does not claim copyright in the individual underlying works.
Document URL
http://search.proquest.com/docview/304605294
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