Abstract/Details

Radiation detection using single event upsets in memory chips


2006 2006

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Abstract (summary)

A photon incident upon Silicon whose energy is greater than the bandgap in Si (1.12eV) will produce an electron-hole pair by lifting an electron from the valance band into the conduction band, leaving a hole in the valance band. If this occurs in a block of pure Si, the electron-hole pairs will merely recombine. However, if this process occurs near the depletion region of a p-n junction, the electric field will separate the electron-hole pairs. This causes a voltage difference to develop between the p and n regions. If an external circuit is connected across the p and n regions, a current will flow; this is the basis for solar cells.

The present study focuses on building X-Ray detectors using commercial-off-the-shelf Si devices that were not designed to be used as X-Ray detectors. Solar cells are designed to work with photons in the visible portion of the spectrum. However photons with any energy greater than 1.12eV can produce electron hole pairs in Si, therefore X-Rays (∼8keV) will also produce electron hole pairs, although most of the incident energy will be wasted. Several different solar cell based X-Ray detectors were designed and tested. One of these designs was employed to perform a basic physics experiment.

Memory chips are also constructed using p-n junctions. Stray electron hole pairs produced by incident radiation can corrupt the data in the memory. Several different types of memory were studied. The susceptibility of these chips to radiation induced errors and the survival rate of these chips following irradiation was investigated. The inherent suitability of various types of memory to use as a detector was also evaluated.

Indexing (details)


Subject
Radiation;
Nuclear physics
Classification
0756: Radiation
0552: Nuclear physics
Identifier / keyword
Applied sciences; Pure sciences
Title
Radiation detection using single event upsets in memory chips
Author
Fullem, Travis Z.
Number of pages
149
Publication year
2006
Degree date
2006
School code
0792
Source
MAI 45/01M, Masters Abstracts International
Place of publication
Ann Arbor
Country of publication
United States
ISBN
9780542784842
Advisor
Cotts, Eric J.
University/institution
State University of New York at Binghamton
University location
United States -- New York
Degree
M.S.
Source type
Dissertations & Theses
Language
English
Document type
Dissertation/Thesis
Dissertation/thesis number
1437091
ProQuest document ID
304928976
Copyright
Database copyright ProQuest LLC; ProQuest does not claim copyright in the individual underlying works.
Document URL
http://search.proquest.com/docview/304928976/abstract
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