Abstract/Details

Back -gated MOSFET for power -adaptive applications


2005 2005

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Abstract (summary)

This thesis reports experimental realization of back-gated MOSFETs that can be integrated in today's technology and explains in detail why they are superior to conventional MOSFETs and how they can be utilized in power-adaptive systems. Most of the previous efforts for back-gated MOSFET fabrication have had drawbacks that prevent optimum use of back-gated MOSFET or were incompatible with existing MOS integration technology. Here, the use of previously processed field-oxide recess as a polish-stop provides the unique advantage of fabricating extremely thin single-crystal silicon layers with a uniform thickness together with back-gates with a buried interconnect network.

Experimental results for back-gated MOSFETs and conventional SOI MOSFETs are compared at 250-nm gate-length. Using Poisson's equation, an analytic discussion is provided to illustrate superior scalability of back-gated MOSFET compared to conventional SOI MOSFET due to its lower drain-induced barrier-lowering and reduced degradation of sub-threshold swing at high drain biases. The measured capacitances are used to understand the back-gated MOSFET as a capacitance network and to explore the mobility of inversion layer at back and front interfaces.

The fabrication technique does not provide self-alignment between two gates. When the back-gate is oversized to assure the overlapping of the entire back channel even with the worst-case of misalignment, the static transistor transport characteristics remain uniform. This facilitates the use of large back-gates to solving the issue of non-uniform transistor characteristics across the wafer.

One additional advantage of the double-gate structure is its operation as a non-volatile memory (NVM) with its superior scalability compared to conventional front-floating gate. Experimental write, erase and read characteristics are reported.

Finally, power-adaptive operation is demonstrated through theoretical and experimental results. Ring-oscillator simulations illustrate the power-adaptive operation using back-gate potentials while showing superior performance to conventional bulk MOSFETs. Experimental results of NMOS inverters show that lower back-gate potentials provide lower power consumption for both dynamic and static operation. In addition, a novel circuit example is provided with the circuits for multiple-valued data transmission across long interconnects. Power consumption and performance advantage is explored with consequences in noise-margin.

Indexing (details)


Subject
Electrical engineering
Classification
0544: Electrical engineering
Identifier / keyword
Applied sciences; Back-gated; MOSFET; Power-adaptive
Title
Back -gated MOSFET for power -adaptive applications
Author
Avci, Uygar Evren
Number of pages
171
Publication year
2005
Degree date
2005
School code
0058
Source
DAI-B 66/04, Dissertation Abstracts International
Place of publication
Ann Arbor
Country of publication
United States
ISBN
9780542102769, 0542102765
Advisor
Tiwari, Sandip
University/institution
Cornell University
University location
United States -- New York
Degree
Ph.D.
Source type
Dissertations & Theses
Language
English
Document type
Dissertation/Thesis
Dissertation/thesis number
3173314
ProQuest document ID
304992041
Copyright
Database copyright ProQuest LLC; ProQuest does not claim copyright in the individual underlying works.
Document URL
http://search.proquest.com/docview/304992041
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