Abstract/Details

Phosphorus implants for off-state improvement of SOI CMOS fabricated at low temperature


2009 2009

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Abstract (summary)

A study on the influence of phosphorus implanted source/drain features on the off-state performance of transistors fabricated in thin-film crystalline silicon at low temperature is presented. Complementary Metal Oxide Semiconductor (CMOS) thin film transistors (TFTs) were fabricated on silicon-on-insulator (SOI) substrates; both NFET and PFET devices in the same p-type layer. Lightly Doped Drain (LDD) features were implemented on NFETs, and a surface-halo source barrier (N-barrier) was implemented on PFETs, using a common implant step. A new mask set was designed with fine resolution of gate offset to investigate small changes in placement of the LDD/N-barrier structures. The focus of this investigation was the off-state characteristics of the devices; the implanted features were designed to help suppress the effects of Gate Induced Drain Leakage (GIDL) and Drain Induced Barrier Lowering (DIBL). Along with the mask design offsets, a number of process variations resulted in TFTs with different degrees of gate overlap and device symmetry. Electrical device characteristics are presented in the study, with comparisons to devices simulated using Silvaco® Atlas™.

Indexing (details)


Subject
Electrical engineering;
Electromagnetics;
Materials science
Classification
0544: Electrical engineering
0607: Electromagnetics
0794: Materials science
Identifier / keyword
Applied sciences; Pure sciences; Complementary metal oxide semiconductor (CMOS); Drain induced barrier lowering (DIBL); Gate induced drain leakage (GIDL); Lightly doped drain (LDD); N-barrier implant; Silicon on insulator (SOI)
Title
Phosphorus implants for off-state improvement of SOI CMOS fabricated at low temperature
Author
Singh, Siddhartha
Number of pages
116
Publication year
2009
Degree date
2009
School code
0465
Source
MAI 48/01M, Masters Abstracts International
Place of publication
Ann Arbor
Country of publication
United States
ISBN
9781109361148
Advisor
Hirschman, Karl D.
Committee member
Moon, James E.; Rommel, Sean L.
University/institution
Rochester Institute of Technology
Department
Microelectronic Engineering
University location
United States -- New York
Degree
M.S.
Source type
Dissertations & Theses
Language
English
Document type
Dissertation/Thesis
Dissertation/thesis number
1469259
ProQuest document ID
305066050
Copyright
Database copyright ProQuest LLC; ProQuest does not claim copyright in the individual underlying works.
Document URL
http://search.proquest.com/docview/305066050
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