Abstract/Details

Carbon nanotube electronics: Modeling, physics, and applications


2004 2004

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Abstract (summary)

In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias transport can be nearly ballistic across distances of several hundred nanometers. Deposition of high-κ gate insulators does not degrade the carrier mobility. The conduction and valence bands are symmetric, which is advantageous for complementary applications. The bandstructure is direct, which enables optical emission. Because of these attractive features, carbon nanotubes are receiving much attention. In this work, simulation approaches are developed and applied to understand carbon nanotube device physics, and to explore device engineering issues for better transistor performance.

Carbon nanotube field-effect transistors (CNTFETs) provide a concrete context for exploring device physics and developing a simulation capability. We have developed an empirical (pz orbital) atomistic, quantum simulator for nanotube transistors. This simulator uses the non-equilibrium Green's function (NEGF) formalism to treat ballistic transport in the presence of self-consistent electrostatics. We also separately developed a coupled Monte-Carlo/quantum injection simulator to understand carrier scattering in CNTFETs.

Numerical simulations are used to understand device physics and to explore device engineering issues. In chapter 4, we did a comprehensive study of the scaling behaviors for ballistic SB CNTFETs. In chapter 5, we analyzed a short-channel, high-performance CNTFET, to understand what controls and how to further improve the transistor performance. In chapter 6, we explored the interesting role of phonon scattering in CNTFETs.

Indexing (details)


Subject
Electrical engineering
Classification
0544: Electrical engineering
Identifier / keyword
Applied sciences; Carbon nanotube
Title
Carbon nanotube electronics: Modeling, physics, and applications
Author
Guo, Jing
Number of pages
123
Publication year
2004
Degree date
2004
School code
0183
Source
DAI-B 65/11, Dissertation Abstracts International
Place of publication
Ann Arbor
Country of publication
United States
ISBN
0496151665, 9780496151660
Advisor
Lundstrom, Mark S.
University/institution
Purdue University
University location
United States -- Indiana
Degree
Ph.D.
Source type
Dissertations & Theses
Language
English
Document type
Dissertation/Thesis
Dissertation/thesis number
3154636
ProQuest document ID
305153025
Copyright
Database copyright ProQuest LLC; ProQuest does not claim copyright in the individual underlying works.
Document URL
http://search.proquest.com/docview/305153025
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