Abstract/Details

Partial oxidation of copper and cobalt-iron thin films: Microstructural mechanisms


2003 2003

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Abstract (summary)

Oxygen-containing copper thin films deposited in an ion beam sputtering system show sharply increased resistivity with decreasing thickness for films around 5.0 nm or less, while bulk resistivity values prevail for thicknesses of 10.0 nm and greater. Oxygen concentration in the range of 6 to 10% reduced Cu resistivity for these thin films. Copper films, measured by atomic force microscopy and x-ray reflectivity, have significantly smoother surfaces in the range of 6 to 10% oxygen. This suggests increased specular scattering of electrons at smoother copper interfaces and surfaces in this thickness regime. X-ray and electron diffraction data show a mixed phase film composed of fine cuprous oxide in the Cu film. Nanoscale cuprous oxide particles, in the copper grain boundaries, effectively obstruct copper grain growth, refining the copper grains and smoothing the surface.

Oxygen sputtering of Co-Fe10 saw no interface smoothing nor was a second phase detected.

Indexing (details)


Subject
Materials science
Classification
0794: Materials science
Identifier / keyword
Applied sciences
Title
Partial oxidation of copper and cobalt-iron thin films: Microstructural mechanisms
Author
Prater, Walter Lloyd
Number of pages
158
Publication year
2003
Degree date
2003
School code
6265
Source
MAI 42/04M, Masters Abstracts International
Place of publication
Ann Arbor
Country of publication
United States
Advisor
Allen, Emily
University/institution
San Jose State University
University location
United States -- California
Degree
M.S.
Source type
Dissertations & Theses
Language
English
Document type
Dissertation/Thesis
Dissertation/thesis number
1417496
ProQuest document ID
305224344
Copyright
Database copyright ProQuest LLC; ProQuest does not claim copyright in the individual underlying works.
Document URL
http://search.proquest.com/docview/305224344/abstract
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