Abstract/Details

Installation and development of VLSI nanotechnology computer simulation capability


2003 2003

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Abstract (summary)

Simulation of microelectronic processes plays a pivotal role in area of Very Large Scale Integration (VLSI) by providing precise and accurate values of various parameters of a nano-device, before its actual fabrication.

This report focuses on the simulation software, Integrated Systems Engineering-Technology Computer Aided Design (ISE-TCAD, version 8.0). The graphical user interface, GENESISe, of this software has been discussed followed by the process and device simulation tools, which are explained with the help of a 100nm MOSFET. The 100nm MOSFET process was developed using various tools available in this software.

This report also presents some of the simulation activities designed for a VLSI nanotechnology class to help students learn this software quickly and easily. A list of future works has also been proposed, which if implemented, will ensure the usage of this software in the best possible manner.

Indexing (details)


Subject
Computer science;
Electrical engineering
Classification
0984: Computer science
0544: Electrical engineering
Identifier / keyword
Applied sciences
Title
Installation and development of VLSI nanotechnology computer simulation capability
Author
Chaganty, Rangasai Venkata
Number of pages
146
Publication year
2003
Degree date
2003
School code
0459
Source
MAI 43/02M, Masters Abstracts International
Place of publication
Ann Arbor
Country of publication
United States
ISBN
9780496028795, 0496028790
University/institution
The University of Texas at El Paso
University location
United States -- Texas
Degree
M.S.
Source type
Dissertations & Theses
Language
English
Document type
Dissertation/Thesis
Dissertation/thesis number
EP10531
ProQuest document ID
305264094
Copyright
Database copyright ProQuest LLC; ProQuest does not claim copyright in the individual underlying works.
Document URL
http://search.proquest.com/docview/305264094
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