Abstract/Details

Design, characterization, and modeling of gallium nitride based HFETs for millimeter wave and microwave power amplifier applications


2006 2006

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Abstract (summary)

GaN Heterostructure Field Effect Transistors (HFETs) have been the subject of intense research over the last decade, and provide exciting opportunities for high power microwave and millimeter wave power amplifiers. While extremely high power densities and efficiencies have been achieved at relatively low microwave frequencies, there are still material and device challenges which prevent the GaN HFETs from being used commercially at higher frequencies.

The work discussed herein attempts to improve transistor power performance at microwave and millimeter wave frequency range by gaining a physical understanding of anomalous device behavior. The work demonstrates that by comparing nominal device characteristics measured using standard techniques (DC, s-parameters) with to pulsed I-V measurements taken at judiciously chosen quiescent bias points, device performance under large single conditions can be inferred.

Physical simulations of GaN HFETs which exhibit good agreement with measurements are described. The effects of layer structure and geometry on device performance are calculated and measured. It is shown that the anomalous transient phenomena collectively known at "current slump" can be accurately simulated by taking into account nonlinear transport of charge along the surface at the drain edge of the gate.

A novel measurement of FET thermal resistance is presented. Using three dimensional heat flow simulations which incorporate temperature dependent thermal conditivities, the thermal characteristics of various GaN HFET layer structures are compared.

Compact-models of GaN HFETs were developed which phenomena logically include anomalous transient behavior. The models accurately reproduced device performance under large signal conditions.

Indexing (details)


Subject
Electrical engineering
Classification
0544: Electrical engineering
Identifier / keyword
Applied sciences; Gallium nitride; Heterostructure FETs; Microwave; Millimeter-wave; Power amplifier
Title
Design, characterization, and modeling of gallium nitride based HFETs for millimeter wave and microwave power amplifier applications
Author
Conway, Adam M.
Number of pages
186
Publication year
2006
Degree date
2006
School code
0033
Source
DAI-B 67/10, Dissertation Abstracts International
Place of publication
Ann Arbor
Country of publication
United States
ISBN
9780542922220
Advisor
Asbeck, Peter M.
University/institution
University of California, San Diego
University location
United States -- California
Degree
Ph.D.
Source type
Dissertations & Theses
Language
English
Document type
Dissertation/Thesis
Dissertation/thesis number
3237481
ProQuest document ID
305353809
Copyright
Database copyright ProQuest LLC; ProQuest does not claim copyright in the individual underlying works.
Document URL
http://search.proquest.com/docview/305353809
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