Abstract/Details

Device physics and simulation of silicon nanowire transistors


2005 2005

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Abstract (summary)

As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the silicon nanowire transistor (SNWT) has attracted broad attention from both the semiconductor industry and academia. To understand device physics in depth and to assess the performance limits of SNWTs, simulation is becoming increasingly important. The objectives of this thesis are: (1) to theoretically explore the essential physics of SNWTs (e.g., electrostatics, transport and bandstructure) by performing computer-based simulations, and (2) to assess the performance limits and scaling potentials of SNWTs and to address the SNWT design issues. A full three-dimensional, self-consistent, ballistic SNWT simulator has been developed based on the effective-mass approximation with which we have evaluated the upper performance limits of SNWTs with various cross-sections (i.e., triangular, rectangular and cylindrical). The results show that SNWTs provide better scaling capability than planar MOSFETs. A microscopic, quantum treatment of surface roughness scattering (SRS) in SNWTs has also been accomplished, and it shows that SRS is less important in SNWTs with small diameters than in planar MOSFETs. Finally, bandstructure effects in SNWTs with small diameters have been examined by using an empirical tight binding model, and a channel orientation optimization has been done for both silicon and germanium nanowire field-effect transistors.

Indexing (details)


Subject
Electrical engineering
Classification
0544: Electrical engineering
Identifier / keyword
Applied sciences; Nanowire transistors; Quantum transport; Silicon; Transistors
Title
Device physics and simulation of silicon nanowire transistors
Author
Wang, Jing
Number of pages
150
Publication year
2005
Degree date
2005
School code
0183
Source
DAI-B 66/08, Dissertation Abstracts International
Place of publication
Ann Arbor
Country of publication
United States
ISBN
9780542273285, 0542273284
Advisor
Lundstrom, Mark S.
University/institution
Purdue University
University location
United States -- Indiana
Degree
Ph.D.
Source type
Dissertations & Theses
Language
English
Document type
Dissertation/Thesis
Dissertation/thesis number
3185687
ProQuest document ID
305419827
Copyright
Database copyright ProQuest LLC; ProQuest does not claim copyright in the individual underlying works.
Document URL
http://search.proquest.com/docview/305419827
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