Noise in gallium nitride-based quantum well structures used for nanometer devices in the frequency range 1 Hz–3 Mhz and temperature range 77K–324K - ProQuest

Skip to main content

Document Preview

Copyright information

Database copyright ProQuest LLC; ProQuest does not claim copyright in the individual underlying works.

Access to the complete full text

This is a short preview of the document. Your library or institution may give you access to the complete full text for this document in ProQuest.

Explore ProQuest

Alternatively, you can purchase a copy of the complete full text for this document directly from ProQuest using the option below:

Noise in gallium nitride-based quantum well structures used for nanometer devices in the frequency range 1 Hz–3 Mhz and temperature range 77K–324K

Duran, Rolando Silvano. Florida International University ProQuest Dissertations Publishing, 2002. 3049800.